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FR151G 1608L GA18A12 60201 059SP XR68C192 C1603 N25F80
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  Datasheet File OCR Text:
 SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors 2SB1302
Features
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -20 -5 -5 -8 1.3 150 -55 to +150 Unit V V V A A W
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1
SMD Type
2SB1302
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -20V , IE = 0 VEB = -4V , IE = 0 VCE = -2V , IC = -500mA VCE = -5V , IC = -200mA VCB = -10V , f = 1MHz
Transistors
Min
Typ
Max -500 -500
Unit nA nA
100 320 60 -250 -1 -25 -20 -5 40
400 MHz pF -500 -1.3 V V V V
VCE(sat) IC = -3A , IB = -60mA VBE(sat) IC = -3A , IB = -60mA V(BR)CBO IC = -10iA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10iA , IC = 0 ton
ns
Storage time
tstg
200
ns
Fall time
tf
10
ns
hFE Classification
Marking Rank hFE 100 R 200 140 BJ S 280 200 T 400
2
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